to-92 plastic-encapsulate transistors KTC3192 transistor(npn) feature high p ower g ain: gpe=29db(typ)(f=10.7mh z ) maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage 35 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 4 v i c collector current -continuous 50 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 35 v collector-emitter breakdown voltage v (br)ceo i c = 1ma , i b =0 30 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 4 v collector cut-off current i cbo v cb = 35v , i e =0 0.1 a emitter cut-off current i ebo v eb = 4v , i c =0 1.0 a dc current gain h fe v ce =12 v, i c = 2ma 40 240 collector-emitter saturation voltage v ce(sat) i c = 10ma, i b = 1ma 0.4 v base-emitter saturation voltage v be(sat) i c = 10ma, i b = 1ma 1.0 v transition frequency f t v ce = 10 v, i c = 1ma 100 400 mhz collector output capacitance c ob v cb =10 v,i e =0,f=1mh z 1.4 3.2 pf collector-base time constant c c.rbb? v ce =10v,i c =1ma, f=30mh z 10 50 ps power gain gpe v cc =6v,i c =1ma, f=10.7mh z 27 33 db classification of h fe rank r o y range 40-80 70-140 120-240 to-92 1.emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,june,2011
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